| PART |
Description |
Maker |
| HA2-5137883 HA7-5137883 HA-5137_883 HA4-5137883 FN |
DIODE SCHOTTKY DUAL COMMON-CATHODE 30V 350mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-23 3K/REEL
60MHz/ Ultra Low Noise/ Precision Operational Amplifier
60MHz, Ultra Low Noise, Precision Operational Amplifier
60MHz Ultra Low Noise Precision Operational Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| 2SK117 E001317 |
From old datasheet system
LOW NOISE AUDIO AMPLIFIER APPLICATONS
N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier
Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise/ Low Power/ Wideband Amplifier
|
Intersil Corporation
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| IDT70914S25PI IDT70914S25PB IDT70914S25P 70914_DS_ |
Low-Noise JFET-Input Operational Amplifier 14-PDIP 0 to 70 高6KK的9）同步双端口RAM
High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CFP -55 to 125 4K X 9 DUAL-PORT SRAM, 25 ns, PQCC68
High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125 4K X 9 MULTI-PORT SRAM, 25 ns, PQCC68
High Speed Low-Noise JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125
HIGH SPEED 36K (4K X 9) SYNCHRONOUS DUAL-PORT RAM
From old datasheet system
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier
Low Noise Amplifier 1.5 - 1.6 GHz
GT 35C 7#12,28#16 SKT RECP
|
MA-Com
MACOM[Tyco Electronics]
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| 5962R9569001VXC 5962R9569001V9A HS1-5104ARH/PROTO |
Op Amp, Quad 8MHz, Low Noise, Slew Rate 2V/s, Rad-Hard
Radiation Hardened Low Noise Quad Operational Amplifier
|
http://
Intersil Corporation
|
| CMLT5078E CMLT5087E CMLT5088E |
SMD Small Signal Transistor Dual PNP Low Noise Amplifier
SMD Small Signal Transistor Dual NPN & PNP Low Noise Amplifier
SMD Small Signal Transistor Dual NPN Low Noise Amplifier
ENHANCED SPECIFICATION PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS
|
Central Semiconductor Corp
|
